Density-functional study of localization in disordered interacting two-dimensional electron systems

project description

Recent systematic studies of the temperature dependence of the resistivity in zero magnetic field in variety of dilute, low-disordered two-dimensional systems (high-mobility silicon MOSFETs, p-SiGe heterostructures, p-GaAs/AlGaAs heterostructures, n-AlAs heterostructures, n-GaAs/AlGaAs heterostructures), demonstrated a possibility of metal-insulator transition at a low critical electron density. This discovery, apparently contradicting to the scaling theory of localization, can neither be explained by interaction effects in clean samples nor by disorder alone, and, despite of the high experimental and theoretical activities, is still far from being completely understood.
In this situation the density functional theory, that, in principle, exactly maps an interacting many-body problem onto an effective non-interacting one, may be considered as an alternative tool.
Under this project we develop the time-dependent density functional theory of the interacting electron system with disorder and study the influence of the weak localization on the behavior of the exchange-correlation potential in impure metals.

project data
project management Prof. Dr. Oleg Pankratov
participants Dr. Valery Valeyev
keywords time-dependent density functional theory, exchange-correlation potential, Keldysh diagrammatic technique, Kohn-Sham Green-Functions
duration 2004-03-01 - 2006-31-01
sponsors German Research Foundation
contact phone +49 9131 8528824
fax +49 9131 8528833

Lehrstuhl für Theoretische Festkörperphysik - Institut für Theoretische Physik IV - Staudtstr. 7-B2 - 91058 Erlangen
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